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Ultrafast Magnetization Reversal by Picosecond Electrical Pulses

机译:皮秒电脉冲超快磁化反转

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摘要

The field of spintronics involves the study of both spin and charge transportin solid state devices with a view toward increasing their functionality andefficiency. Alternatively, the field of ultrafast magnetism focuses on the useof femtosecond laser pulses to excite electrons in magnetic materials, whichallows the magnetic order to be dramatically changed on unprecedentedsub-picosecond time-scales. Here, we unite these two distinct researchactivities by using picosecond electrical pulses to rapidly excite electrons ina magnetic metal. We are able to deterministically and repetitively reverse themagnetization of a GdFeCo film with sub-10 picosecond electrical pulses. Themagnetization reverses in ~10ps, which is more than an order of magnitudefaster than any other electrically controlled magnetic switching. We attributethe deterministic switching of the magnetization to ultrafast excitation of theelectrons, a fundamentally different mechanism from other current drivenswitching mechanisms such as spin-transfer-torque (STT) or spin-orbit-torque(SOT). The energy density required for switching is measured and the process isfound to be efficient, projecting to only 4 fJ needed to switch a (20 nm)^3cell, which is comparable to other state-of-the-art STT-MRAM memory devices.This discovery will launch a new field of research into picosecond spintronicphenomena and devices.
机译:自旋电子学领域涉及固态器件中自旋和电荷传输的研究,以期提高其功能性和效率。另外,超快磁场领域的重点是使用飞秒激光脉冲来激发磁性材料中的电子,从而使磁阶在前所未有的亚皮秒级时域发生了巨大变化。在这里,我们通过使用皮秒电脉冲在磁性金属中快速激发电子来结合这两个不同的研究活动。我们能够确定地和重复地反转亚10皮秒电脉冲的GdFeCo薄膜的磁化强度。磁化反转速度约为10ps,这比任何其他电控磁性开关快一个数量级。我们将确定性的磁化转换归因于电子的超快激发,这是与其他电流驱动转换机制(例如自旋传递转矩(STT)或自旋轨道转矩(SOT))根本不同的机制。测量了切换所需的能量密度,并且发现该过程是高效的,预计切换至(20 nm)^ 3单元仅需要4 fJ,这可以与其他最新的STT-MRAM存储设备相媲美。这一发现将启动皮秒自旋电子现象和设备的新研究领域。

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